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To obtain the apparent activation energies, an average growth rate, determined as the amount of incorporated oxygen over the growth time of 1 h, was used instead of the instantaneous value of the rate at a given time. One should also note that the oxide thickness range studied in this work corresponds to the "fast" initial regime of silicon oxidation, in which the activation energy may differ from the value of the linear (reaction-limited) regime. A more detailed discussion of the apparent activation during initial silicon oxidation can be found in H. C. Lu. Ph.D. thesis, Rutgers University, 1997.
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