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Volumn 81, Issue 10, 1997, Pages 6992-6995

Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides

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EID: 0001089210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365264     Document Type: Article
Times cited : (33)

References (37)
  • 17
    • 0008534562 scopus 로고    scopus 로고
    • edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms Electrochemical Society. Pennington. NJ
    • 2 Interface-3, edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms (Electrochemical Society. Pennington. NJ, 1996), p. 49.
    • (1996) 2 Interface-3 , pp. 49
    • Gusev, E.P.1    Lu, H.C.2    Gustafsson, T.3    Garfunkel, E.4
  • 28
    • 85033189346 scopus 로고    scopus 로고
    • note
    • To obtain the apparent activation energies, an average growth rate, determined as the amount of incorporated oxygen over the growth time of 1 h, was used instead of the instantaneous value of the rate at a given time. One should also note that the oxide thickness range studied in this work corresponds to the "fast" initial regime of silicon oxidation, in which the activation energy may differ from the value of the linear (reaction-limited) regime. A more detailed discussion of the apparent activation during initial silicon oxidation can be found in H. C. Lu. Ph.D. thesis, Rutgers University, 1997.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.