Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900°C rapid thermal annealing

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 207-210

  Lucovsky, G ^a   Banerjee, A ^a   Hinds, B ^a   Claflin, B ^a   Koh, K ^a   Yang, H ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDATION; OXIDES; PHASE TRANSITIONS; SECOND HARMONIC GENERATION; X RAY PHOTOELECTRON SPECTROSCOPY; BONDING; SEMICONDUCTING SILICON; SILICA;

INTERFACIAL SUBOXIDE BONDING; PLASMA ASSISTED OXIDATION; RAPID THERMAL ANNEALING;

SEMICONDUCTOR DEVICE STRUCTURES; FIELD EFFECT TRANSISTORS;

EID: 0031150249     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00049-X     Document Type: Article

References (10)

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