HIGH-RREQUENCY AC CHARACTERISTICS OF 1.5 nm GATE OXIDE MOSFETS

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 105-108

  Momose, Hisayo Sasaki ^a   Morifuji, Eiji ^a   Yoshitomi, Takashi ^a   Ohgwo, Tatsuya ^a   Saito, Xlasanobu ^a   Morimoto, Toyota ^a   Katsumata, Yasuhiro ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; MOS DEVICES; MOSFET DEVICES; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FREQUENCIES; GATES (TRANSISTOR); OXIDATION; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SOLID STATE OSCILLATORS; TRANSCONDUCTANCE;

GATE OXIDE; GATE-LENGTH; HIGH FREQUENCY OPERATION; MOSFETS; RING OSCILLATOR;

GATES (TRANSISTOR); MOSFET DEVICES;

CMOS RING OSCILLATOR; SALICIDATION;

EID: 0030407070     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553132     Document Type: Conference Paper

References (3)

1. Y. Taw, S.Wind, Y. J. Mii, Y. Lii, D.Moy, K. A. Jenkins, C. L. Chen,P. J. Coane, D.Klaus, J. Bucchignano..M. Rosdield, M. G. R. Thomson, and M. Polcari. "High performance 0.1 pm CMOS devices with 1.5 V power supply,"in IEDM Tech. Dig., pp. 127-130, 1993.
2. H. S. Momose, M. Ono, T. Yoshitomi.T. Ohgum, S. Nakamura, M. Saito, and H. Iwai, 'Tunneling gate oxide approach to ultra-highcunent drive in small-geometry MOSFETs," in IEDM Tech.Dig.,pp. 593-596, 1994.
3. T. Yoshitomi, T. Ohguro, M. Saito, M. Ono, E. Morifuji, H. S. Momose, and H. Iwai, "High performance 0.15 p n single gate COsalicide CMOS," Dig. of Tech. Papers, WSI Symp. on Technol., Hawaii, pp. 3435,1996.