Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer

Applied Physics Letters

Volumn 71, Issue 7, 1997, Pages 903-905

  Choi, S C ^a   Cho, M H ^a   Whangbo, S W ^a   Whang, C N ^a   Kang, S B ^b   Lee, S I ^b   Lee, M Y ^b  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000125857     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119683     Document Type: Article

References (20)

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