Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

Electronics Letters

Volumn 33, Issue 13, 1997, Pages 1139-1140

  Yang, Wen Luh ^a   Lin, Chiou Jyi ^a   Chao, Tien Sheng ^b   Liu, Don Gey ^a   Lei, Tan Fu ^c  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

MOS integrated circuits; Plasma

Indexed keywords

ELECTRIC BREAKDOWN; GATES (TRANSISTOR); PLASMA APPLICATIONS; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE STRUCTURES;

INDUCTIVE COUPLING INTROGEN PLASMAS (ICNP);

MOS DEVICES;

EID: 0031163713     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970706     Document Type: Article

References (6)

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2. 2O-growth oxides', IEEE Electron Device Lett., 1992, 13, pp. 606-608
3. 2O annealed and reoxidation on thermal oxide characteristics', IEEE Trans. Electron Devices, 1992, 139, pp. 402-404
4. 2 for p+-polysilicon gated MOS device application', IEEE Electron Device Lett., 1995, 16, pp. 319-321
5. 2O-grown oxides', IEEE Electron Device Lett., 1993, 14, pp. 179-181
6. WU, S.L., LEE, C.L., LEI, T.F., CHEN, J.F., and CHEN, L.J.: 'Suppression of born penetration into an ultrathin gate oxide (<7nm) by using a stacked-amorphous-silicon (SAS) film'. IEDM Tech. Dig., 1993, pp. 329-332