Boron diffusion in nitrided-oxide gate dielectrics leading to high suppression of boron penetration in P-MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1244-1250

  Aoyama, Takayuki ^a   Ohkubo, Satoshi ^a   Tashiro, Hiroko ^a   Tada, Yoko ^a   Suzuki, Kunihiro ^a   Horiuchi, Kei ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Boron diffusion; Boron penetration; Diffusivity; Nitrided oxide; pMOSFETs

Indexed keywords

EID: 0001065441     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1244     Document Type: Article

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