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Volumn 70, Issue 3, 1997, Pages 351-353

Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS DEVICES; THERMAL EFFECTS; ULTRATHIN FILMS;

EID: 0030785003     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118411     Document Type: Article
Times cited : (118)

References (8)
  • 2
    • 3743051798 scopus 로고
    • The Japan Soc. of Appl. Phys., Sapporo, (27p-X-3)
    • K. Okada and Y. Hirofuji, Extended Abstracts of The 54th Autumn Meeting (The Japan Soc. of Appl. Phys., Sapporo, 1993), p. 633 (27p-X-3); K. Okada, S. Kawasaki, and Y. Hirofuji, Extended Abstracts of Solid State Devices and Materials (The Japan Society of Applied Physics, Yokohama, 1994), p. 565.
    • (1993) Extended Abstracts of the 54th Autumn Meeting , pp. 633
    • Okada, K.1    Hirofuji, Y.2
  • 3
    • 0001918634 scopus 로고
    • The Japan Society of Applied Physics, Yokohama
    • K. Okada and Y. Hirofuji, Extended Abstracts of The 54th Autumn Meeting (The Japan Soc. of Appl. Phys., Sapporo, 1993), p. 633 (27p-X-3); K. Okada, S. Kawasaki, and Y. Hirofuji, Extended Abstracts of Solid State Devices and Materials (The Japan Society of Applied Physics, Yokohama, 1994), p. 565.
    • (1994) Extended Abstracts of Solid State Devices and Materials , pp. 565
    • Okada, K.1    Kawasaki, S.2    Hirofuji, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.