Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics

IBM Journal of Research and Development

Volumn 43, Issue 3, 1999, Pages 287-300

  Ellis, K A ^a   Buhrman, R A ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HEAT TRANSFER; MATHEMATICAL MODELS; NITROGEN COMPOUNDS; PHASE COMPOSITION; PYROLYSIS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; TEMPERATURE;

GAS PHASE CHEMISTRY; NITROUS OXIDE PROCESSING; RAPID THERMAL PROCESSING; SILICON OXYNITRIDE GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 0032669437     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.433.0287     Document Type: Article

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