Chemical vapor deposition of ultrathin Ta2O5 films using Ta[N(CH3)2]5

Applied Physics Letters

Volumn 72, Issue 10, 1998, Pages 1187-1189

  Son, K A ^a   Mao, A Y ^a   Sun, Y M ^a   Kim, B Y ^a   Liu, F ^a   Kamath, A ^a   White, J M ^a   Kwong, D L ^a   Roberts, D A ^b   Vrtis, R N ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001066730     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121009     Document Type: Article

References (29)

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28. In our CVD film growth, no significant changes in the chemical composition of the films have been observed following deposition temperature change from 400 to 500 °C.
29. The data in this Table II were taken with pressures in the Torr regime. A background was subtracted from the C signal, and for the 900 sccm film this amounted to ∼30% of the C peak area.