Thermally robust Ta2O5 capacitor for the 256-Mbit DRAM

IEEE Transactions on Electron Devices

Volumn 43, Issue 6, 1996, Pages 919-923

  Kwon, Kee Won ^a   Kang, Chang Seok ^a   Park, Soon Oh ^a   Kang, Ho Kyu ^a   Ahn, Sung Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOROSILICATE GLASS; ELECTRODES; LEAKAGE CURRENTS; PYROLYSIS; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON COMPOUNDS; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

BOROPHOSPHOSILICATE GLASS; POLYSILICON LAYER; TANTALUM PENTOXIDE CAPACITOR;

CAPACITORS;

EID: 0030170226     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502124     Document Type: Article

References (11)

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