Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1632-1642

  Grahn, J V ^a   Hellberg, P E ^a   Olsson, E ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001479910     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368256     Document Type: Article

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