Preparation of poly-Ge considering its application to a-Si/poly-Ge multilayer structures by a low-temperature solid phase crystallization method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 262-266

  Maruyama, Eiji ^a   Haku, Hisao ^a   Tanaka, Makoto ^a   Kiyama, Seiichi ^a   Tsuda, Shinya ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Amorphous silicon; Multilayer; Polycrystalline germanium; Scanning electron microscopy; Solid phase crystallization; X ray diffraction

Indexed keywords

SOLID PHASE CRYSTALLIZATION;

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; LOW TEMPERATURE EFFECTS; MULTILAYERS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

SEMICONDUCTING GERMANIUM;

EID: 0030644482     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.262     Document Type: Article

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