Study of hot-carrier degradation in n- and p-MOSFETs with ultra-thin gate oxides in the direct-tunneling regime

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 453-456

  Momose, Hisayo Sasaki ^a   Nakamura, Shin ichi ^a   Ohguro, Tatsuya ^a   Yoshitomi, Takashi ^a   Morifuji, Eiji ^a   Morimoto, Toyota ^a   Katsumata, Yasuhiro ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT TUNNELING REGIME; HOT CARRIER DEGRADATION; ULTRATHIN GATE OXIDES;

ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DEVICE MANUFACTURE;

MOSFET DEVICES;

EID: 84886448092     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)