Quantitative model of the thickness dependence of breakdown in ultra-thin oxides

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 325-328

  Stathis, J H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; INTERFACES (MATERIALS); MOS DEVICES; PERCOLATION (SOLID STATE); SILICA; BOUNDARY CONDITIONS; PROBABILITY; THREE DIMENSIONAL COMPUTER GRAPHICS;

INTERFACE STATE DENSITY; ULTRATHIN OXIDE BREAKDOWN;

ULTRATHIN FILMS;

EID: 0031150258     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00074-9     Document Type: Article

References (9)

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