Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1364-1367

  Chao, T S ^a   Chien, C H ^b   Hao, C P ^b   Liaw, M C ^a   Chu, C H ^a   Chang, C Y ^a,b   Lei, T F ^a,b   Sun, W T ^c   Hsu, C H ^c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Boron penetration; Nitrogen; pMOSFET; X ray photoelectron spectroscopy

Indexed keywords

EID: 0000048168     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1364     Document Type: Article

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