Growth and film characteristics of N2O and NO oxynitride gate and tunnel dielectrics

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1081-1086

  Hegde, Rama I ^a   Maiti, Bikas ^a   Tobin, Philip J ^a,b  

^a MOTOROLA INC   (United States)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; FILM GROWTH; INTERFACES (MATERIALS); NITROGEN OXIDES; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYNITRIDE; REOXIDIZED OXYNITRIDE FILMS; SURFACE CHEMISTRY;

DIELECTRIC FILMS;

EID: 0031096796     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837535     Document Type: Article

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