Ge+dose dependence of electrical characteristics in germanium ion-implanted polycrystalline silicon films

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 225-228

  Kang, M K ^a   Matsui, T ^b   Wada, K ^b   Kuwano, H ^b  

^a SAMSUNG Electronics   (South Korea)

^b KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOSE DEPENDENCES; ELECTRICAL CHARACTERISTIC; POLYCRYSTALLINE SILICON FILMS;

EID: 84920716097     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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