Modeling and characterization of n+- and p+-polysilicon-gated ultra-thin oxides (21-26 angstroms)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 149-150

  Lo, S H ^a   Buchanan, D A ^a   Taur, Y ^a   Han, L K ^a   Wu, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRIC PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); ION IMPLANTATION; MOS DEVICES; MOSFET DEVICES; OXIDES; SEMICONDUCTING BORON; TRANSCONDUCTANCE; ULTRATHIN FILMS;

POLYSILICON; POLYSILICON DEPLETION EFFECT; ULTRATHIN OXIDE CAPACITORS;

CAPACITORS;

EID: 0030683249     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)