Post poly-Si gate rapid thermal nitridation for boron penetration reduction and oxide reliability improvement

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 237-240

  Zhou, Zhixu ^a,b   Tinkler, Steven ^b   Schroder, Dieter K ^a,c   Paulsen, Ron ^a,b   Dahl, Phillip ^b   Keating, Rich ^b   Park, Changhae ^a,b  

^a IEEE   (United States)

^b MOTOROLA INC   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFUSION; DOPING (ADDITIVES); GATES (TRANSISTOR); NITRIDING; RELIABILITY;

BORON PENETRATION;

MOSFET DEVICES;

EID: 0032124257     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701428     Document Type: Article

References (9)

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