Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures

Applied Physics Letters

Volumn 70, Issue 20, 1997, Pages 2708-2710

  DiMaria, D J ^a   Stathis, J H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRON TUNNELING; OXIDES; SILICA; VOLTAGE MEASUREMENT; WEIBULL DISTRIBUTION;

FOWLER-NORDHEIM TUNNELING; OXIDE THICKNESS; STRESS INDUCED LEAKAGE CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 0000863885     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118999     Document Type: Article

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