Reliability and integration of ultra-thin gate dielectrics for advanced CMOS

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 13-20

  Buchanan, D A ^a   Lo, S H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRON TUNNELING; FILM GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; QUANTUM THEORY; SILICA; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS; RELIABILITY; SEMICONDUCTOR DEVICE MODELS;

GATE DIELECTRIC; QUANTUM MECHANICAL TUNNELING; ULTRATHIN GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0031150209     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00007-5     Document Type: Article

References (11)

1. H.S. Momose, M. Ono, T. Yoshitimi, T. Ohguro, S. Nakamura, M. Saito and H. Iwai, IEDM Tech. Dig., 593, (1994).
2. H.S. Momose, M. Ono, T. Yoshitimi, T. Ohguro, S. Nakamura, M. Saito and H. Iwai, IEEE Trans. on Elect.Dev., 43, 1233, (1995).
3. F. Stern, Phys. Rev B, p.4891, 1972.
4. nd ed., IEEE Press, 1991
5. s D.J. DiMaria and E. Cartier, J. Appl. Phys., 78, 3883, (1995).
6. D. Dumin, S.K. Mopuri, S. Vanchinathan, R.S. Scott, S. Subamoniam and Terrill G. Lewis, IEEE Trans. on Elect.Dev., 42, 1233, (1995).
7. D.J. DiMaria, IEEE Elect.Dev. Lett., 16, 184, (1995).
8. D.J. DiMaria, E. Cartier and D. Arnold, J. Appl. Phys.., 73, 3367, (1993).
9. J. Suñe, I. Placencia, E. Barniol, E. Farrés, F. Martin and X. Aymerish, Thin Solid Films, 185, 347, (1990).
10. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas and H. Maes, IEDM Technical Digest, 863, (1995).
11. J.H. Stathis, INFOS 1997 - this publication (1997).