Correlation between two dielectric breakdown mechanisms in ultra-thin gate oxides

Applied Physics Letters

Volumn 69, Issue 8, 1996, Pages 1128-1130

  Satake, Hideki ^a   Yasuda, Naoki ^a   Takagi, Shin Ichi ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000583321     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117080     Document Type: Article

References (8)

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