Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors

Applied Physics Letters

Volumn 70, Issue 22, 1997, Pages 2999-3001

  Devine, R A B ^a   Autran, J L ^b   Warren, W L ^c   Vanheusdan, K L ^c   Rostaing, J C ^d  

^a ORANGE LABS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000564754     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118769     Document Type: Article

References (7)

1. J. W. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996).
2. C. G. Van de Walle and W. B. Jackson, Appl. Phys. Lett. 69, 2441 (1996).
3. K. F. Galloway, M. Gaitan, and T. J. Russell, IEEE Trans. Plasma Sci. NS-31, 1497 (1984).
4. S. C. Sun and J. D. Plummer, IEEE Trans. Electron Devices ED-27, 1497 (1980).
5. P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48, 133 (1986).
6. J. L. Autran and B. Balland, Rev. Sci. Instrum. 65, 2141 (1994).
7. R. A. B. Devine, W. L. Warren, K. L. Vanheusden, C. Mourrain, and M.-J. Bouzid, Mater. Res. Soc. Symp. Proc. (to be published).