Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 317-320

  Dimaria, D J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE MEASUREMENT; ELECTRIC FIELD EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; PHOSPHORUS; SILICA;

MICROSCOPIC DEFECTS; OXIDE THICKNESS DEPENDENCE; THIN OXIDE LAYERS;

MOSFET DEVICES;

EID: 0031150257     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00072-5     Document Type: Article

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