Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta 2O 5 gate insulator

IEEE Electron Device Letters

Volumn 18, Issue 9, 1997, Pages 447-449

  Autran, Jean Luc ^a,c   Devine, Roderick ^b   Chaneliere, Christophe ^a   Balland, Bernard ^a  

^a UNIVERSITÉ DE LYON   (France)

^b ORANGE LABS   (France)

^c IEEE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATING MATERIALS; ELECTRIC REACTORS; ELECTRON CYCLOTRON RESONANCE; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TANTALUM COMPOUNDS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

MOSFET DEVICES;

EID: 0031236156     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.622525     Document Type: Article

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