Gate dielectric properties of silicon nitride films formed by jet vapor deposition

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 259-267

  Ma, T P ^a  

^a Yale University   (United States)

Author keywords

Jet vapor deposition; Silicon nitride

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELECTRON TUNNELING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NUMERICAL METHODS; SUBSTRATES; SUPERCONDUCTING FILMS; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

FOWLER-NORDHEIM TUNNELING THEORY; FRENKEL-POOLE TRANSPORT THEORY; JET VAPOR DEPOSITION (JVD);

SILICON NITRIDE;

EID: 0031548269     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80091-8     Document Type: Article

References (22)

1. J.J. Schmitt and B.L. Halpern, Method and Apparatus for the Deposition of Solid Films of Material from a Jet Stream Entraining the Gaseous Phase of Said Material, U.S. Patent No. 4788082 (1988).
2. C.L. Hwang and T.P. Ma, J. Integr. Ferroelectr. 2(1-4) (1992).
3. D. Wang, T.P. Ma, J. Golz, B. Halpern, J, Schmitt, IEEE Electron Device Lett. EDL-13 (9) (1992) 482.
4. X.W. Wang, T.P. Ma, G.J. Cui, T. Tamagawa, J.W. Golz, S. Kareci, B.L. Halpern, J.J. Schmitt, Jpn. J. Appl. Phys. 34-I (2B) (1995) 955-958.
5. X.W. Wang, Y. Shi, T.P. Ma, G.J. Cui, T. Tamagawa, J. Golz, B. Halpern, J. Schmitt, Extending Gate Dielectric Scaling Limit by Use of Nitride or Oxynitride, 1995 Symposium on VLSI Technology Digest of Technical Papers (1995) p. 109.
6. X. Wang, M. Khare and T.P. Ma, Effects of Water Vapor Anneal on MIS Devices Made of Nitrided Gate Dielectrics, 1996, Symposium on VLSI Technology Digest of Technical Papers, paper 23.1 (1996).
7. A. Mallik, X.W. Wang, T.P. Ma, J. Appl. Phys. 79 (11) (1996) 8507.
8. B.E. Deal, E.L. MacKenna, P.L. Castro, J. Electrochem. Soc. 116 (1969) 997.
9. A.S. Ginovker, V.A. Gristsenko, S.P. Sinitsa, Phys. Status Solidi (a) 26 (1974) 489.
10. V.J. Kapoor, R.S. Bailey, H.J. Stein, J. Vac. Sci. Technol. A 1 (2) (1983) 600.
11. S. Fujita, T. Ohishi, T. Toyoshima, A. Sasaki, J. Appl. Phys. 57 (2) (1985) 426.
12. M. Maeda, H. Nakamura, J. Appl. Phys. 58 (1) (1985) 484.
13. K. Alloert, A. Van Calster, H. Loos, A. Lequesne, J. Electrochem. Soc. 132 (1985) 1765.
14. W.R. Knolle, J.W. Osenbach, J. Appl. Phys. 58 (3) (1985) 1248.
15. D.V. Tsu, G. Lucovsky, M.J. Mantini, Phys. Rev. B 33 (10) (1986) 7096.
16. T.J. Coder, J. Chapple-Sokol, J. Electrochem. Soc. 140 (1993) 2071.
17. M.K. Mazumder, K. Kobayashi, J. Mitsuhashi, H. Koyama, IEEE Trans. Electron Devices ED-41 (12) (1994) 2417.
18. G. Scoles (Ed.), Atomic and Molecular Beam Methods, I, Oxford University, Oxford, 1988.
19. E.H. Nicollian, A. Goetzberger, Bell Syst. Tech. J. 46 (6) (1967) 1055.
20. E.M. Vogel, W.L. Hill, V. Misra, P.K. McLarty, J.J. Wortman, J.R. Hauser, P. Morfouli, G. Ghigaudo, T. Ouisse, IEEE Trans. Electron Devices ED-43 (5) (1996) 753.
21. D.M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39 (1992) 269.
22. K.F. Schuegraf, C.C. King and C. Hu, Utra-thin Silicon Dioxide Leakage Current and Scaling Limit, Digest of 1992, Symp. on VLSI Tech., June (1992) pp. 18-19.