Q-bd dependencies of ultrathin gate oxides on large area capacitors

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 321-324

  Paulzen, G M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; FILM GROWTH; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTING SILICON; ANNEALING; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; STRESSES; SUBSTRATES; ULTRATHIN FILMS;

GATE INJECTION; ULTRATHIN GATE OXIDES; ELECTRICAL STRESSES;

ULTRATHIN FILMS; CAPACITORS;

EID: 0031150278     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00073-7     Document Type: Article

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