Electrical reliability and structural inhomogeneity of thermally grown SiO 2

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 230-236

  Toriumi, A ^a   Satake, H ^a   Yasuda, N ^a   Tanamoto, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

a SiO 2; Charge to breakdown; IR absorption

Indexed keywords

ABSORPTION; BOND STRENGTH (CHEMICAL); INFRARED RADIATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NUMERICAL METHODS; PERCOLATION (SOLID STATE); THERMAL EFFECTS;

ELECTRICAL RELIABILITY; INJECTION POLARITY;

SILICA;

EID: 0031548371     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80085-2     Document Type: Article

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