Preventing boron penetration through 25-Å gate oxides with nitrogen implant in the Si substrates

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 212-214

  Liu, C T ^a   Ma, Y ^a   Luftman, H ^a   Hillenius, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; ION IMPLANTATION; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SUBSTRATES;

BORON PENETRATION PREVENTION;

MOSFET DEVICES;

EID: 0031144288     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568768     Document Type: Article

References (8)

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