A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1639-1642

  Degraeve, R ^a   Roussel, Ph ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN OF SOLIDS; MOS DEVICES; OXIDES; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; WEIBULL DISTRIBUTION; PROBABILITY; THIN FILMS;

CRITICAL ELECTRON TRAP DENSITY; THIN GATE OXIDES; GATE OXIDE BREAKDOWN STATISTICS;

GATES (TRANSISTOR);

EID: 0030273976     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00163-1     Document Type: Article

References (3)

1. I.C. Chen et al., Appl. Phys. Lett., vol 49 (11), pp. 669-671, (1986).
2. R. Degraeve et al., IEDM Tech. Dig., pp. 863-866, (1995).
3. K.F. Schuegraf et al., IEEE Trans. Electron. Devices, vol. 41, no. 5, pp. 761-767, (1994).