0.1 μm complementary metal-oxide-semiconductors and beyond

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 4020-4023

  Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342401766     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588635     Document Type: Article

References (9)

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2. S. Inaba, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, H. Hazama, M. Yoshimi, and A. Toriumi, IEEE Trans. Electron Devices ED-41, 2399 (1994).
3. R. W. Keys, Proc. IEEE 63, 740 (1975).
4. T. Mizuno, J. Okamura, and A. Toriumi, IEEE Trans. Electron Devices ED-41, 2216 (1994).
5. A. Ohata, H. Niiyama, T. Shibata, K. Nakajima, and A. Toriumi, Jpn. J. Appl. Phys. 34, 4485 (1995).
6. A. Toriumi, J. Koga, H. Satake, and A. Ohata, IEDM Dig. 847 (1995).
7. A. Ohata and A. Toriumi, IEICE Trans. Electron. E79-C, 1586 (1996).
8. M. Nagase, T. Ishiyama, and K. Murase, Proceedings of the 6th International Symposium on SOI Technology and Devices (The Electrochemical Society, Pennington, NJ, 1994), p. 191.
9. A. Toriumi, A. Ohata, and J. Koga, Extended Abstracts of the 14th Symposium on Future Electron Devices, Tokyo, 1995, p. 67.