Access devices for 3D crosspoint memory

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 32, Issue 4, 2014, Pages

  Burr, Geoffrey W ^a   Shenoy, Rohit S ^a,c   Virwani, Kumar ^a   Narayanan, Pritish ^a   Padilla, Alvaro ^a   Kurdi, Bülent ^a,d   Hwang, Hyunsang ^b  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c INTEL CORPORATION   (United States)

^d SanDisk Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC STORAGE; NONVOLATILE STORAGE; ELECTRIC SWITCHES; PHASE CHANGE MEMORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON WAFERS;

ACCESS DEVICES; CROSS-POINT MEMORY; MAGNETIC RAMS; NEUROMORPHIC COMPUTING; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY TECHNOLOGY; STORAGE-CLASS MEMORY; MIXED IONIC-ELECTRONIC CONDUCTION; NONLINEAR I-V CHARACTERISTICS; OXIDE SEMICONDUCTOR; SPIN TORQUE TRANSFER;

RANDOM ACCESS STORAGE;

EID: 84905041584     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4889999     Document Type: Review

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