Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Nanotechnology

Volumn 22, Issue 47, 2011, Pages

  Liu, Xinjun ^a   Sadaf, Sharif Md ^a   Son, Myungwoo ^a   Shin, Jungho ^a   Park, Jubong ^a   Lee, Joonmyoung ^a   Park, Sangsu ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CONCEPTUAL STRUCTURES; CROSS-POINT ARRAY; EVOLUTION TREND; HIGH-DENSITY; INTERFACE EFFECT; KEY PARAMETERS; MEMORY APPLICATIONS; MEMORY ELEMENT; MEMORY SWITCHING; QUALITATIVE MODEL; RESISTIVE SWITCHING; SWITCH ELEMENT; THRESHOLD SWITCHING;

METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METALS; NIOBIUM OXIDE; PLATINUM; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING; TUNGSTEN;

EQUIPMENT;

EID: 80655144552     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/47/475702     Document Type: Article

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