A bipolar RRAM selector with designable polarity dependent on-voltage asymmetry

2013 5th IEEE International Memory Workshop, IMW 2013

Volumn , Issue , 2013, Pages 178-181

  Lashkare, S ^a   Karkare, P ^a   Bafna, P ^a   Raju, M V S ^a   Srinivasan, V S S ^a   Lodha, S ^a   Ganguly, U ^a   Schulze, J ^b   Chopra, S ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b UNIVERSITY OF STUTTGART   (Germany)

^c APPLIED MATERIALS INC   (United States)

Author keywords

asymmetric; bipolar RRAM; punch through; selector

Indexed keywords

ASYMMETRIC; BIPOLAR RRAM; EXPERIMENTAL DEVICES; IV CHARACTERISTICS; LOW TEMPERATURES; PUNCH-THROUGH; SELECTOR; TECHNOLOGY NODES;

EPITAXIAL GROWTH; SILICON;

RANDOM ACCESS STORAGE;

EID: 84883692998     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2013.6582128     Document Type: Conference Paper

References (15)

1. E. Katsia, et al "Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications" Appl. Phys. Lett., v. 94, pp. 143501, 2009
2. Y. Wu, B. Lee, and H. S. P. Wong, ''Ultra-low power Al2O3 based RRAM with 1 A reset current, '' in Proc. VLSI-TSA, 2010, pp. 136-137.
3. N. Raghavan, K. L. Pey, X. Li, W. H. Liu, X. Wu, M. Bosman, and T. Kauerauf, "Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime, " IEEE Electron Devices Lett., v. 32, pp. 716, 2011
4. C. H. Cheng, C. Y. Tsai, A. Chin, and F. S. Yeh, " High Performance Ultra-Low Energy RRAM with Good Retention and Endurance, " Tech. Dig. IEDM 2010, pp. 448-451
5. D.-J. Seong et al, "Effect of Oxygen Migration and Interface Engineering on Resistance Switching Behavior of Reactive Metal/Polycrystalline Pr0. 7Ca0. 3MnO3 Device for Nonvolatile Memory Applications, " Tech. Dig. IEDM 2009, pp. 101-104.
6. Y. Wu, Y. Chai, H.-Y. Chen, S. Yu, H.-S. P. Wong, "Resistive Switching AlOx-Based Memory with CNT Electrode for Ultra-Low Switching Current and High Density Memory Application, " Symp. VLSI Tech. 2011, pp. 26-27
7. C. H. Ho et al, "9nm Half-Pitch Functional Resistive Memory Cell with <1A Programming Current Using Thermally Oxidized Sub-Stoichiometric WOx Film" " Tech. Dig. IEDM 2009, pp. 436-439
8. V. S. S. Srinivasan, S. Chopra, P. Karkare, P. Bafna, S. Lashkare, P. Kumbhare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, and U. Ganguly, ?Punch-through Diode based Bipolar RRAM Selector, IEEE Electron Devices Letters 2012 (10. 1109/LED. 2012. 2209394)
9. J. J. Huang et al, "Bipolar Nonlinear Ni/TiO2/Ni Selector for 1S1R Crossbar Array Applications: IEEE Elect. Dev. Letters, v. 32, n. 10, pp. 1427, 2011
10. A. Kawahara et al., "An 8Mb Multi-Layered Cross-Point ReRAM Macro with 443MB/s Write Throughput", ISSCC Dig. Tech. Papers, pp. 432 (2012).
11. K. Gopalakrishnan et al., "Highly-Scalable Novel Access Device based on Mixed Ionic Electronic Conduction (MIEC) Materials for High Density Phase Change Memory (PCM) Arrays", Symp. on VLSI technology, pp. 205 (2010).
12. M. H. Lee, C.-Y. Kao, C.-L. Yang, Y.-S. Chen, H. Y. Lee, F. Chen, and M.-J. Tsai, "Reliability of Ambipolar Switching Poly-Si Diodes for Cross-Point Memory Applications", 69th Annual Device Research Conference 2011, pp 89-90.
13. M. Son, J. Lee, J. Park, J. Shin, G. Choi, S. Jung, W. Lee, S. Kim, S. Park, and H. Hwang, "Excellent Selector Characteristics of Nanoscale VO2 for High-Density Bipolar ReRAM Applications", IEEE Electron Device Lett., vol. 32, no. 11, pp. 1579-1581 2011.
14. J. Liang and H.-S. P. Wong, "Cross-point memory array without cell selectors-device characteristics and data storage pattern dependencies", IEEE Trans. on Electron Devices, v. 57, pp 2531-2538, 2010.
15. P. Bafna, P. Karkare, S Srinivasan, S. Chopra, S. Lashkare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U. Ganguly, "Epitaxial Si Punch-Through based Selector for Bipolar RRAM", DRC 2012