Dependence of read margin on pull-up schemes in high-density one selector-one resistor crossbar array

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 420-426

  Lo, Chun Li ^a   Hou, Tuo Hung ^a   Chen, Mei Chin ^a   Huang, Jiun Jia ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Crossbar array; one selector one resistor (1S1R); read margin; resistive random access memory (RRAM); resistive switching (RS); sneak current

Indexed keywords

CROSSBAR ARRAYS; ONE SELECTOR-ONE RESISTOR (1S1R); READ MARGIN; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING;

ELECTRIC NETWORK ANALYSIS;

RESISTORS;

EID: 84871799817     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2225147     Document Type: Article

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