Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Virwani, K ^a   Burr, G W ^a   Shenoy, R S ^a   Rettner, C T ^a   Padilla, A ^a   Topuria, T ^a   Rice, P M ^a   Ho, G ^b   King, R S ^a   Nguyen, K ^a   Bowers, A N ^a   Jurich, M ^a   Brightsky, M ^b   Joseph, E A ^b   Kellock, A J ^a   Arellano, N ^a   Kurdi, B N ^a   Gopalakrishnan, K ^b  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS DEVICES; ADVANCED TECHNOLOGY; CDS; CROSS-POINT MEMORY; CURRENT LEVELS; HIGH-SPEED OPERATION; SWITCHING SPEED;

ELECTRON DEVICES;

EID: 84876100582     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478967     Document Type: Conference Paper

References (4)

1. K. Gopalakrishnan et. al., VLSI Tech. Symp., T19.4 (2010).
2. R. S. Shenoy et. al., VLSI Tech. Symp., T5.1 (2011).
3. G. W. Burr et. al., VLSI Tech. Symp., T5.4 (2012).
4. M. Breitwisch et. al., VLSI Tech. Symp., T6B-3 (2007).