Bidirectional two-terminal switching device for crossbar array architecture

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1023-1025

  Song, Yun Heub ^a   Park, Seung Young ^b   Lee, Jung Min ^a   Yang, Hyung Jun ^a   Kil, Gyu Hyun ^a  

^a Hanyang University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

Bidirectional current write; crossbar array; junction device; spin transfer torque (STT) magnetic random access memory (MRAM)

Indexed keywords

BIDIRECTIONAL CURRENT; CROSSBAR ARCHITECTURE; CROSSBAR ARRAYS; DRAIN-INDUCED BARRIER LOWERING; JUNCTION DEVICES; MAGNETIC RANDOM ACCESS MEMORIES; ON-OFF RATIO; REVERSE BIAS; SPIN TRANSFER TORQUE; SWITCHING DEVICES;

DRAIN CURRENT; MEMORY ARCHITECTURE; MRAM DEVICES; RANDOM ACCESS STORAGE;

MAGNETIC STORAGE;

EID: 79960928547     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2157452     Document Type: Article

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