Complementary switching in metal oxides: Toward diode-less crossbar RRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Nardi, F ^a   Balatti, S ^a   Larentis, S ^a   Ielmini, D ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONCEPT-BASED; CROSSBAR ARRAYS; HIGH DENSITY; METAL OXIDES; RESISTIVE SWITCHING MEMORIES; SUPPLY CURRENTS; UNIFIED MODEL;

ELECTRON DEVICES; SWITCHING;

RANDOM ACCESS STORAGE;

EID: 84857007298     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131647     Document Type: Conference Paper

References (11)

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