Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory

Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

  Yang, M ^a   Hu, P ^a   Lu, J Q ^a   Lv, Q B ^a   Li, S W ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-BAR MEMORIES; CROSSBAR ARRAYS; CURRENT REDUCTION; CURRENT VOLTAGE; DEVICE CHARACTERISTICS; HIGH DENSITY; MEMORY ELEMENT; NEUROMORPHIC CIRCUITS; NON-LINEARITY; NON-VOLATILE MEMORIES; PROGRAMMABLE ANALOGS;

ANALOG CIRCUITS;

EID: 79959440689     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3591975     Document Type: Article

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