ZrO2-based memory cell with a self-rectifying effect for crossbar worm memory application

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 344-346

  Zuo, Qingyun ^a   Long, Shibing ^a   Yang, Shiqian ^a   Liu, Qi ^a   Shao, Lubing ^a   Wang, Qin ^a   Zhang, Sen ^a   Li, Yingtao ^a   Wang, Yan ^a   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Antifuse memory; Crossbar array; Write once read many times (WORM); ZrO2

Indexed keywords

BEFORE AND AFTER; CROSSBAR ARRAYS; HIGH-DENSITY; LOW-RESISTANCE STATE; MEMORY APPLICATIONS; MEMORY CELL; MEMORY DEVICE; ON/OFF RATIO; POTENTIAL APPLICATIONS; RECTIFICATION RATIO; RECTIFYING CHARACTERISTICS; RECTIFYING EFFECT; RECTIFYING PROPERTIES; RESISTANCE DISTRIBUTION; REVERSE CURRENTS; TRANSPORT MECHANISM; WRITE-ONCE-READ-MANY;

PLATINUM; SEMICONDUCTOR STORAGE; ZIRCONIUM ALLOYS;

DISTILLATION;

EID: 77950087105     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039849     Document Type: Article

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