Nanosecond threshold switching of GeTe 6 cells and their potential as selector devices

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Anbarasu, M ^a,b   Wimmer, Martin ^a   Bruns, Gunnar ^a   Salinga, Martin ^a   Wuttig, Matthias ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b INDIAN INSTITUTE OF TECHNOLOGY INDORE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; DELAY TIME; HOLDING VOLTAGE; NANO SCALE; THRESHOLD SWITCHING; TIME-RESOLVED; TRANSIENT PARAMETER; VOLTAGE DEPENDENCE; VOLTAGE PULSE;

ELECTRIC POTENTIAL; POWER QUALITY;

SWITCHING;

EID: 84859799159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3700743     Document Type: Article

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