Full integration of highly manufacturable 512Mb PRAM based on 90nm technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Oh, J H ^a   Park, J H ^a   Lim, Y S ^a   Lim, H S ^a   Oh, Y T ^a   Kim, J S ^a   Shin, J M ^a   Song, Y J ^a   Ryoo, K C ^a   Lim, D W ^a   Park, S S ^a   Kim, J I ^a   Kim, J H ^a   Yu, J ^a   Yeung, F ^a   Jeong, C W ^a   Kong, J H ^a   Kang, D H ^a   Koh, G H ^a   Jeong, G T ^a   Jeong, H S ^a   Kim, Kinam ^a   more..

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

90 NM TECHNOLOGY; FULL INTEGRATION;

ELECTRON DEVICES;

EID: 46049090421     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346905     Document Type: Conference Paper

References (3)

1. S. Lai, IEDM Tech. Dig., (2003).
2. S.J. Ahn et. al., Proceedings of VLSI, 98 (2005).
3. Y.J. Song et. al., Proceedings of VLSI, 146 (2006).