Analysis of complementary RRAM switching

IEEE Electron Device Letters

Volumn 33, Issue 8, 2012, Pages 1186-1188

  Wouters, Dirk J ^a,b   Zhang, Leqi ^a,b   Fantini, Andrea ^a   Degraeve, Robin ^a   Goux, Ludovic ^a   Chen, Yang Y ^a,b   Govoreanu, Bogdan ^a   Kar, Gouri S ^a   Groeseneken, Guido V ^a,b   Jurczak, Malgorzata ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Complementary resistive switch (CRS); memory devices; nonvolatile memory; resistive switching

Indexed keywords

COMPLEMENTARY RESISTIVE SWITCH (CRS); NON-VOLATILE MEMORIES; RESISTIVE SWITCHING; SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS; SWITCHING VOLTAGES;

DATA STORAGE EQUIPMENT; HAFNIUM OXIDES; MATERIALS PROPERTIES; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

SWITCHING;

EID: 84864485488     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2198789     Document Type: Article

References (9)

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