Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Lee, Myoung Jae ^a   Lee, Dongsoo ^a   Kim, Hojung ^a   Choi, Hyun Sik ^a   Park, Jong Bong ^a   Kim, Hee Goo ^a   Cha, Young Kwan ^b   Chung, U In ^a   Yoo, In Kyeong ^a   Kim, Kinam ^a  

^a Semiconductor Device Laboratory   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLING PERFORMANCE; DEVICE ACTIVE REGION; MEMORY ARRAY; MEMORY CELL; NANOSCALE ARRAYS; ON CURRENTS; PERFORMANCE DEGRADATION; THRESHOLD SWITCHING;

ELECTRON DEVICES; GLASS;

TIME SWITCHES;

EID: 84876109468     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478966     Document Type: Conference Paper

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