Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Tran, X A ^a   Gao, B ^a,b   Kang, J F ^b   Wu, X ^a   Wu, L ^a   Fang, Z ^a,c   Wang, Z R ^a   Pey, K L ^a   Yeo, Y C ^d   Du, A Y ^e   Liu, M ^f   Nguyen, B Y ^g   Li, M F ^h   Yu, H Y ^a,b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b PEKING UNIVERSITY   (China)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^e GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

^f INSTITUTE OF MICROELECTRONICS   (China)

^g PARC TECHNOLOGIQUE DES FONTAINES   (France)

^h FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; HIGH DENSITY; MATERIALS AND PROCESS; RESISTIVE SWITCHING; WORST CASE;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES;

RANDOM ACCESS STORAGE;

EID: 84863037379     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131648     Document Type: Conference Paper

References (16)

1. B. Lee, et al., VLSI 2009, p28.
2. B. Gao, et al. VLSI 2009, p30.
3. J. M. Lee, et al., Adv Mater, 2007, vol. 19, pp.73-76.
4. B. Cho, et al., Adv Mater, vol. 21, pp.1228-1232,2009.
5. H. Shima, et al., APL, vol. 92, p.043510, 2008.
6. Y. Q. Zuo, et al., JAP, vol. 106, p. 073724, 2009.
7. J. Liang, et al., TED, vol. 57, p.2531, 2010.
8. X. A. Tran, VLSI 2011, p. 44.
9. S. Lee et al, APL, vol. 93, pp. 212105, 2008.
10. E. Katsia, et al., Org Electron, vol.9, pp.1044-1050, 2008.
11. G. Tallarida, et.al, IMW, 2009.
12. H. K. Kim, APL, vol. 96, p. 053106.
13. C. Y. Chen, IEDM 2003, pp.905-908.
14. M. Jo, VLSI 2010, p. 53.
15. J. Lee, IEDM 2010, pp.452-455.
16. E. Linn, et al., Nature Mater, vol.9, p. 403, 2010.