Variability of resistive switching memories and its impact on crossbar array performance

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Chen, An ^a   Lin, Ming Ren ^a  

^a Strategic Technology Group   (United States)

Author keywords

crossbar arrays; Resistive switching memory; RRAM; variability

Indexed keywords

CROSSBAR ARRAYS; METAL OXIDES; OPERATION CONDITIONS; RESISTANCE VARIATIONS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORIES; RRAM; SENSING MARGIN; SIGNAL DEGRADATION; STATISTICAL MODELING; STOCHASTIC NATURE; SWITCHING PROCESS; VARIABILITY;

METALLIC COMPOUNDS; NONVOLATILE STORAGE; SWITCHING; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79959318674     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784590     Document Type: Conference Paper

References (15)

1. S.S. Sheu, et al, Symposium VLSI Tech., 82 (2009).
2. K.C. Liu, et al, Thin Solid Films 518, 7460-7463, (2010).
3. D. Le, et al, IEDM Tech. Digest (2006).
4. Y.H. Tseng, et al, IEDM Tech. Digest, 109 (2009).
5. S.Z. Rahaman, et al, VLSI-TSA, 134 (2010).
6. I.G. Baek, et al, IEDM Tech. Digest 587 (2004).
7. S. Kawabata, et al, IMW (2010).
8. M.H. Lin, et al, J. Phys. D 43, 295404 (2010).
9. W.Y. Chang, et al, APL 95, 042104 (2009).
10. Q. Liu, et al, ESSDERC, 221 (2009).
11. W. Guan, et al, APL 91, 062111 (2007).
12. K.C. Liu, et al, Microelectronics Reliability 50, 670 (2010).
13. Y.S. Chen, et al, IEDM Tech. Digest, 105 (2009).
14. A. Chen, et al, IEDM Tech. Digest, 764, (2005).
15. A. Chen, et al, APL 92, 013503 (2008).