Electronic Switching in Phase-Change Memories

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 452-459

  Pirovano, Agostino ^a   Lacaita, Andrea L ^b   Benvenuti, Augusto ^a   Pellizzer, Fabio ^a   Bez, Roberto ^a  

^a STMICROELECTRONICS   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Chalcogenide; Nonvolatile memories; Phase change memory (PCM) devices

Indexed keywords

AMORPHOUS MATERIALS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY GAP; SCANNING ELECTRON MICROSCOPY;

CHALCOGENIDES; NONVOLATILE MEMORIES; PHASE-CHANGE MEMORY (PCM) DEVICES;

SWITCHING;

EID: 1642327470     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.823243     Document Type: Article

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