A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 459-462

  Hosomi, M ^a   Yamagishi, H ^a   Yamamoto, T ^a   Bessho, K ^a   Higo, Y ^a   Yamane, K ^a   Yamada, H ^a   Shoji, M ^a   Hachino, H ^a   Fukumoto, C ^a   Nagao, H ^a   Kano, H ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MAGNETIC MOMENTS; MAGNETIZATION; RANDOM ACCESS STORAGE; TUNNEL JUNCTIONS;

MEMORY CELL; SPIN MOMENTUM; SPIN TORQUE TRANSFER; SPIN-RAM;

NONVOLATILE STORAGE;

EID: 33847743417     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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