Reliability of ambipolar switching poly-Si diodes for cross-point memory applications

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 89-90

  Lee, M H ^a   Kao, C Y ^a   Yang, C L ^a   Chen, Y S ^b   Lee, H Y ^b   Chen, F ^b   Tsai, M J ^b  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-DIRECTIONAL; CROSS-POINT MEMORY; DRIVING DEVICE; HIGH CAPACITY; LOW-POWER CONSUMPTION; METAL OXIDES; PLANAR MOSFET; SWITCHING DEVICES;

BIPOLAR TRANSISTORS; DIODES; FLASH MEMORY; SILICON;

STATIC RANDOM ACCESS STORAGE;

EID: 84880740758     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994428     Document Type: Conference Paper

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