Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 151-152

  Lee, Hyung Dong ^a   Kim, S G ^a   Cho, K ^a   Hwang, H ^a   Choi, H ^a   Lee, J ^a   Lee, S H ^a   Lee, H J ^a   Suh, J ^a   Chung, S O ^a   Kim, Y S ^a   Kim, K S ^a   Nam, W S ^a   Cheong, J T ^a   Kim, J T ^a   Chae, S ^a   Hwang, E R ^a   Park, S N ^a   Sohn, Y S ^a   Lee, C G ^a   Shin, H S ^a   Lee, K J ^a   Hong, K ^a   Jeong, H G ^a   Rho, K M ^a   Kim, Y K ^a   Chung, S ^a   Nickel, J ^b   Yang, J J ^b   Cho, H S ^b   Perner, F ^b   Williams, R S ^b   Lee, J H ^a   Park, S K ^a   Hong, S J ^a   more..

^a Hynix Semiconductor Inc   (South Korea)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROPRIATE MATERIALS; CELL EFFICIENCY; CROSSBAR ARRAYS; HIGH DENSITY MEMORY; MEMORY CELL; MEMORY OPERATIONS; NON-LINEARITY; READ MARGIN; READ/WRITE OPERATIONS; TEST CHIPS; TRANSITION-METAL OXIDES;

TRANSITION METALS;

EID: 84866534688     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242506     Document Type: Conference Paper

References (3)

1. C. Ho et al., IEDM Tech. Dig., 2010
2. J. Yi et al., VLSI Tech. Dig., 2011
3. I. G. Back et al., IEDM Tech. Dig., 2011